8 11 GHz 200 W GaN internal matching power transistors

DOI:	10.11809/bqzbgcxb2023.07.037
Keywords:	GaN HEMT; internal matching; power amplifier; X band; wide band
Abstract:	High output power gallium nitride (GaN) high electron mobility transistors (HEMTs) have been widely developed for X band radar application. In order to meet the requirement of wide band and high power capabilities of power amplifiers in the integrated development of the radar system, this paper develops a wide band 200 W internal matching power transistor of 8.0 to 11.0 GHz based on the 0.5 μm GaN HEMT process platform of Nanjing Institute of Electronic Devices. Four 10.8 mm GaN HEMT cores are included inside the device. L C network is utilized to reduce virtual impedance of the core, and then wide band impedance transformation and power distribution/synthesis are carried by a multi stage microstrip line impedance transformer to realize wide band 50 Ω impedance matching. During the operating frequency band from 8.0 to 11.0 GHz, under the drain voltage of 40 V, the pulse width of 100 μs and the duty cycle of 10%, the in band output power is more than 200 W, the power additional efficiency (PAE) exceeds 37.3%, and the power gain is greater than 8 dB. In addition, the in band peak output power is 263 W, the optimal PAE is 43.1%, and the maximum power gain reaches 9.2 dB. It is the first time to achieve an output power of more than 200 W in the range of 8.0 to 11.0 GHz in X band related reports at home and abroad.
Published:	2023-07-28
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