Supervisor:
Southwest Ordnance Industry Bureau
Organizer:
Chongqing Ordnance Industry Society
Chongqing University of Technology
Chongqing University of Technology
Performance analysis of thermoelectric generator with honeycomb structure semiconductors
| DOI: | 10.11809/bqzbgcxb2024.07.025 |
| Keywords: | thermoelectric conversion; honeycomb structure; power density; semiconductor; waste heat recovery |
| Abstract: | In order to solve the problem that the monotonous structure of semiconductors is difficult to meet the requirements of diverse applications. The output power density and energy conversion efficiency of thermoelectric devices with bionic honeycomb structure semiconductors and the traditional cube semiconductors are analyzed from temperature difference, filling ratio, and cross sectional area ratio in order to achieve more efficient and durable power output. The results show that the power density of the hollow semiconductor is always higher than that of the filled semiconductor. Results show that the power density of the device with a hollow semiconductor is 104.3% of that of the conventional one with a filled cuboid semiconductor at a temperature difference of 300 K. The cross sectional area ratio has an optimal value for energy conversion efficiency. And the cross sectional area of p type thermoelectric semiconductors is always greater than that of n type semiconductors. The optimal cross sectional area ratio of p type semiconductors to n type semiconductors are 1.3, 1.2, and 1 at temperature differences of 300 K, 250 K, and 50 K. The results show that the honeycomb structure semiconductor is worth researching in improving system reliability and device power to mass ratio. This research promotes the application of thermoelectric generators in lightweight, precise and integrated occasions. |
| Issue: | Vol. 45 No. 7 (2024) |
| Published: | 2024-07-26 |
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