Supervisor:
Southwest Ordnance Industry Bureau
Organizer:
Chongqing Ordnance Industry Society
Chongqing University of Technology
Chongqing University of Technology
Electromagnetic sensitivity study of NMOS tube under the action of electromagnetic pulse
| DOI: | 10.11809/bqzbgcxb2023.12.004 |
| Keywords: | electromagnetic pulse; NMOS tube; avalanche breakdown; secondary breakdown; melt burnout |
| Abstract: | To address the electromagnetic sensitivity of detonation control circuits in battlefield environments, NMOS tubes, as vulnerable and sensitive devices, are often subjected to miscontacts, breakdowns and other phenomena. Through the Silvaco TCAD, a metal field effect (MOS) transistor in the strong electromagnetic pulse two dimensional electro thermal model is established, the transient response of NMOS tubes in the operating region when injecting electromagnetic pulse at the gate is obtained, the injection of different amplitudes of the pulse voltage transistor electric field strength, current density and the change rule of the temperature inside the tube are analyzed. The results show that: NMOS tube in the drain injection pulse voltage exceeds the threshold, the main occurrence of the PN junction reverse bias caused by avalanche breakdown, avalanche breakdown produces a large number of thermal energies concentrated in the PN junction surface, the tube occurs in the electric field strength, current density abnormally large, and then thermal secondary breakdown leads to the emergence of the local melting in the NMOS tube, resulting in permanent failure. In the case of constant pulse amplitude, the avalanche breakdown voltage increases with the gate voltage. |
| Issue: | Vol. 44 No. 12 (2023) |
| Published: | 2023-12-28 |
| PDF HTML | |